Researchers at the US National Renewable Energy Laboratory (NREL) and the Swiss Center for Electronics and Microtechnology (CSEM) achieved the record 29.8% conversion efficiency using a dual-junction III-V/Si concept made up of a top cell made of gallium indium phosphide stacked with a bottom cell made of crystalline silicon (CSi).
"It's a record within this mechanically stacked category," says NREL senior researcher David Young.